Authors:

Patrick Chuang

Date Created:

Not specified

Course Title:

Professor:

Not specified

About Paper:

Oxides were promising for electronic applications, such as thin film transistors (TFTs), due to their high mobility and low-temperature manufacturing process. P-type oxide has gained attention since most oxides available are n-type, limiting the development of bipolar application. In this study, sputtered tin monoxide (SnO) is used as the channel of TFT to confirm its p-type property. Although metallic tin (Sn) targets are commonly used to deposit p-type SnO, the ceramic SnO target is chosen in this study because it does not need an additional chemical reaction to become SnO thin film, offering improved structural stability and stoichiometry control. The objective of this research is to optimize the deposition process for p-type SnO thin film using radio frequency (RF) sputter deposition with SnO target. The samples were deposited under 50W to 100W RF power with Ar/O2 gas compositions of 0%, 5%, 13%, and 20% oxygen. All the results of samples that are deposited with more than 5% oxygen show the n-type semiconductor property. However, the SnO TFT deposited with 0% oxygen shows transition characteristics that are between p-type and n-type properties. This result shows the samples deposited with more than 5% oxygen are over-oxidized. Consequently, in the next step, gas compositions with less than 5% oxygen for the deposition will be tested to get the p-type TFT. The findings of this study are anticipated to contribute to the advancement of p-type oxides and their utilization in industrial devices such as TFTs, aligning with the existing processing demands.

Source:

Purdue University / 2023

Topics:

No topics listed

Co-authors:

Patrick Chuang