Authors:

Devon Fears

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About Paper:

Synthesizing P-type SnOx (1≤x<2) thin films for their electrical properties is challenging because of the way that Tin atoms and Oxygen atoms in the film interact with each other. Mainly, studies that focus on using an annealing process to engineer the properties of SnOx vary temperature, time, and atmospheric conditions such as the pressure, or concentration of oxygen, and measure the properties before and after the annealing process. For example, a study by Hsu et al. (2013) found that by annealing SnOx with Rapid Thermal Annealing in a Vacuum Environment, the samples could transform from a highly resistive form with a resistivity of ~105 Ω·cm to a form with a resistance of around ~10 Ω·cm, which corresponded to the appearance of SnO crystals in the XRD study. In our work, the electrical resistivity of SnOx thin films have been measured during the annealing process in a vacuum environment with temperatures ranging from 100 to 200°C. For each test, the sample was annealed for at least 24 hours. The strain, and the electrical resistance, were simultaneously measured as well, but in an oxygen-rich, positive pressure environment. The films have not just shown that there is a decrease in resistance, but a sudden change around 1 hour of annealing at 200°C. This change confirms the existence of metastable p-type SnO in the film.

Source:

Purdue University / 2023

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Co-authors:

Devon Fears