Authors:

Gustavo Sáez Cruz

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About Paper:

Topological insulators have a gap in the bulk electronic band structure but have topological properties - such as finite Chern numbers. While the bulk gap prevents electrons from flowing freely in the bulk, the finite Chern numbers lead to chiral edge modes, i.e., conduction of electricity on the surface. The chiral edge currents are strong indicators of the topological phase, and are sensitive to changes in the topology of the material, especially through a topological phase transition. In this project, we intend to take a step forward toward the realization of topological quantum devices by investigating phase transitions in topological insulators. In an attempt to do this, we take a two-pronged approach. In the first part, we investigate Topological Phase Transitions(TPT) in 1D and 2D Topological Matter along with their simulations on NISQ Devices [1]. In particular, we calculate the winding which is a topological invariant. Our goal is to extend the concept towards Hamiltonians which can be naturally found in nature, such as those found in candidate topological insulators Bi2Te2Se, and others. In the second part, we guide our choice of experiments via the calculation of the Density functional theory (DFT)[2] to unravel the band structure and the gauge symmetry structure of candidate materials in the 1D and 2D limits. References: [1] Mei et al., PRL. 125, 160503 (2020). [2] Lee et al., O.V. (2015). Book: Density Functional Theory Calculations of Topological Insulators, Wiley.

Source:

Purdue University / 2023

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No topics listed

Co-authors:

Gustavo Sáez Cruz