Authors:

Nicodemus M O'Brian

Date Created:

Not specified

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About Paper:

While critical for operation in many radiation environments, such as nuclear reactors and outer space, small- scale electronics are highly susceptible to damage during exposure to ionizing radiation, such as photons and neutrons. Excessive exposure can damage electronics without proper shielding, necessitating replacement or decreasing performance. To understand how ionizing radiation impacts diode electrical performance, we consider Schottky diodes, which are simple, and commonly manufactured devices that are readily studied. To assess ionizing radiation damage, we attached the Schottky diodes to a circuit board after irradiation and measured the current-voltage curve during exposure to a reverse bias voltage for comparison with non- irradiated diodes. These results will elucidate the consequence of ionizing radiation on device performance, particularly performance in the field emission regime, changes in the space-charge-limited current, and device breakdown voltage, to guide the development of radiation shielding to protect the devices. Keywords: Semiconductor Diode; Solid-State Devices; Radiation Hardening; Space Charge Limited Current; Ionizing Radiation

Source:

Purdue University / 2024

Topics:

No topics listed

Co-authors:

Nicodemus M O'Brian