Authors:

Ayah Rahman

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About Paper:

Metal-oxide semiconductor field effect transistors (MOSFETs) are critical components within power circuits found in systems exposed to nuclear and gamma radiation environments. These components must survive elevated radiation and thermal conditions to ensure system integrity. Previous literature exploring MOSFET failure has highlighted the need for a live-monitoring system to measure the output voltages and drain- source resistance of a MOSFET per unit dose. Due to its commercial availability, the BSS1119N MOSFET contained within a boost converter circuit is evaluated. This paper seeks to explore methods for assessing thermal and nuclear effects under elevated heat and radiation conditions. Additionally, methods to remotely conduct resistance measurements and challenges are discussed. To analyze the MOSFET's response to raised temperatures, a 10k ohm PTC thermistor was incorporated within the circuit to allow for negative feedback with respect to temperature. The results of the thermal experiment show that within our range of interest, 24° to 80° C, the system output voltage decreases from 34.5 V at room temperature to 29 V as temperature increases before steadily returning to its nominal value at room temperature. Evidence shows that PTC experiments conducted within the radiation environment of Purdue Reactor Number One (PUR- 1) have negated known boost converter voltage increases due to temperature dependence. As a result, any increase in output voltage can be reasonably assumed to be from radiation-induced damage as opposed to induced temperature changes. While ongoing efforts are being made to refine live monitoring, these findings will improve the overall diagnostic capabilities of power conversion circuits. Keywords: Nuclear Radiation; MOSFET; Temperature; Live-Monitoring

Source:

Purdue University / 2025

Topics:

No topics listed

Co-authors:

Ayah Rahman